ssf5506 55v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 140 i d @ tc = 100c continuous drain current, v gs @ 10v 100 i dm pulsed drain current 520 a p d @tc = 25c power dissipation 220 w linear derating factor 1.5 w/c v ds drain-source voltage 55 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.3mh 735 mj i ar avalanche current @ l=0.3mh 70 a t j t stg operating junction and storage temperature range -55 to + 175 c v dss 55v r ds (on) 3.8mohm(typ.) i d 140a to- 220 marking and pin assignment schematic diagram ? advanced trench mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
ssf5506 55v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.68 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 v v gs = 0v, id = 250a 3.8 5 v gs =10v,i d = 75a r ds(on) static drain-to-source on-resistance 6.4 m t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.2 v t j = 125 1 v ds = 55v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 150 q gs gate-to-source charge 35 q gd gate-to-drain("miller") charge 61 nc i d = 101a, v ds =44v, v gs = 10v t d(on) turn-on delay time 21 t r rise time 102 t d(off) turn-off delay time 52 t f fall time 105 ns v gs =10v, id = 110a vds=38v, r g =1.1 c iss input capacitance 7684 c oss output capacitance 627 c rss reverse transfer capacitance 542 pf v gs = 0v v ds = 25v ? = 900khz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 140 a i sm pulsed source current (body diode) 520 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.99 1.3 v i s =75a, v gs =0v t rr reverse recovery time 42 ns q rr reverse recovery charge 56 nc t j = 25c, i f =90a, di/dt = 100a/s
ssf5506 55v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c. the maximum current rating is limited by bond-wires.
ssf5506 55v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
ssf5506 55v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
ssf5506 55v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 4.400 4.550 4.700 0.173 0.179 0.185 a1 1.270 1.300 1.330 0.050 0.051 0.052 a2 2.590 2.690 2.790 0.102 0.106 0.110 b 0.770 - 0.900 0.030 - 0.035 b2 1.230 - 1.360 0.048 - 0.054 c 0.480 0.500 0.520 0.019 0.020 0.020 d 15.100 15.400 15.700 - 0.606 - d1 9.000 9.100 9.200 0.354 0.358 0.362 dep 0.050 0.285 0.520 0.002 0.011 0.020 e 10.060 10.160 10.260 0.396 0.400 0.404 e1 - 8.700 - - 0.343 - p 1 1.400 1.500 1.600 0.055 0.059 0.063 e e1 h 1 6.100 6.300 6.500 0.240 0.248 0.256 l 12.750 12.960 13.170 0.502 0.510 0.519 l1 - - 3.950 - - 0.156 l2 p 3.570 3.600 3.630 0.141 0.142 0.143 q 2.730 2.800 2.870 0.107 0.110 0.113 q 1 - 0.200 - - 0.008 - ?1 5 0 7 0 9 0 5 0 7 0 9 0 ?2 1 0 3 0 5 0 1 0 3 0 5 0 0.073ref 5.08bsc 0.2bsc symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc 1.85ref to220 package outline dimension
ssf5506 55v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: ssf5506 package (available) to-220 operating temperature range c : -55 to 175 oc devices per unit packag e type units/tu be tubes/inner box units/inner box inner boxes/carton box units/carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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